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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F479AI датащи(PDF) 118 Page - STMicroelectronics |
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STM32F479AI датащи(HTML) 118 Page - STMicroelectronics |
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118 / 217 page  Electrical characteristics STM32F479xx 118/217 DocID028010 Rev 3 5.3.10 Internal clock source characteristics The parameters given in Table 39 and Table 40 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator Figure 33. ACCHSI vs. temperature 1. Based on test during characterization. Table 39. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design -- - 1 % HSI oscillator accuracy TA = –40 to 105 °C(3) 3. Based on test during characterization. − 8-4.5 % TA = –10 to 85 °C(3) − 4- 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. − 1- 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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