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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F412RG датащи(PDF) 106 Page - STMicroelectronics |
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STM32F412RG датащи(HTML) 106 Page - STMicroelectronics |
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106 / 193 page  Electrical characteristics STM32F412xE/G 106/193 DocID028087 Rev 4 6.3.9 Internal clock source characteristics The parameters given in Table 42 and Table 43 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 15. High-speed internal (HSI) RC oscillator L Figure 31. ACCHSI versus temperature 1. Guaranteed by characterization, not tested in production. Table 42. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design, not tested in production -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Based on characterization, not tested in production –8 - 4.5 % TA = –10 to 85 °C(3) –4 - 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. –1 - 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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