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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F412XE датащи(PDF) 101 Page - STMicroelectronics |
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STM32F412XE датащи(HTML) 101 Page - STMicroelectronics |
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101 / 193 page  DocID028087 Rev 4 101/193 STM32F412xE/G Electrical characteristics 161 6.3.8 External clock source characteristics High-speed external user clock generated from an external source In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The external clock signal has to respect the Table 56. However, the recommended clock input waveform is shown in Figure 27. The characteristics given in Table 38 result from tests performed using an high-speed external clock source, and under ambient temperature and supply voltage conditions summarized in Table 15. tWUSTOP Wakeup from STOP mode Code execution on Flash Main regulator - 12.9 15.0 µs Main regulator, Flash memory in Deep power down mode - 104.9 120.0 Wakeup from Stop mode, regulator in low power mode(2) - 20.8 28.0 Regulator in low power mode, Flash memory in Deep power down mode(2) - 112.9 130.0 tWUSTOP Wakeup from STOP mode code execution on RAM(3) Main regulator with Flash in Stop mode or Deep power down -4.9 7.0 Wakeup from Stop mode, regulator in low power mode and Flash in Stop mode or Deep power down(2) - 12.8 20.0 tWUSTDBY Wakeup from Standby mode - - 316.8 400.0 tWUFLASH Wakeup of Flash From Flash_Stop mode - 11.0 From Flash Deep power down mode - 50.0 1. Guaranteed by characterization, not tested in production. 2. The specification is valid for wakeup from regulator in low power mode or low power low voltage mode, since the timing difference is negligible. 3. For the faster wakeup time for code execution on RAM, the Flash must be in STOP or DeepPower Down mode (see reference manual RM0402). Table 37. Low-power mode wakeup timings(1) (continued) Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit |
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