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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F446ME датащи(PDF) 165 Page - STMicroelectronics |
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STM32F446ME датащи(HTML) 165 Page - STMicroelectronics |
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165 / 201 page  DocID027107 Rev 5 165/201 STM32F446xC/E Electrical characteristics 174 NAND controller waveforms and timings Figure 58 through Figure 61 represent synchronous waveforms, and Table 98 and Table 99 provide the corresponding timings. The results shown in this table are obtained with the following FMC configuration: • COM.FSMC_SetupTime = 0x01; • COM.FMC_WaitSetupTime = 0x03; • COM.FMC_HoldSetupTime = 0x02; • COM.FMC_HiZSetupTime = 0x01; • ATT.FMC_SetupTime = 0x01; • ATT.FMC_WaitSetupTime = 0x03; • ATT.FMC_HoldSetupTime = 0x02; • ATT.FMC_HiZSetupTime = 0x01; • Bank = FMC_Bank_NAND; • MemoryDataWidth = FMC_MemoryDataWidth_16b; • ECC = FMC_ECC_Enable; • ECCPageSize = FMC_ECCPageSize_512Bytes; • TCLRSetupTime = 0; • TARSetupTime = 0. In all timing tables, the THCLK is the HCLK clock period. Table 97. Synchronous non-multiplexed PSRAM write timings(1)(2) 1. CL = 30 pF. 2. Guaranteed based on test during characterization. Symbol Parameter Min Max Unit tw(CLK) FMC_CLK period 2THCLK – 1 - ns td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2.5 td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK – 0.5 - td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2 td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2 td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) 0 - td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 3 td(CLKH-NWEH) FMC_CLK high to FMC_NWE high THCLK + 1 - td(CLKL-Data) FMC_D[15:0] valid data after FMC_CLK low - 2.5 td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 3 - td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK + 1.5 - tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1.5 - th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 - |
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