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STM32F446MC датащи(PDF) 148 Page - STMicroelectronics |
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STM32F446MC датащи(HTML) 148 Page - STMicroelectronics |
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148 / 201 page ![]() Electrical characteristics STM32F446xC/E 148/201 DocID027107 Rev 5 6.3.23 VBAT monitoring characteristics 6.3.24 Reference voltage The parameters given in Table 83 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 16. 6.3.25 DAC electrical characteristics Table 82. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50- K Ω Q Ratio on VBAT measurement - 4 - - Er(1) Error on Q –1 - +1 % TS_vbat(2)(2) ADC sampling time when reading the VBAT 1 mV accuracy 5- - µs 1. Guaranteed by design. 2. Shortest sampling time can be determined in the application by multiple iterations. Table 83. internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V TS_vrefint(1) ADC sampling time when reading the internal reference voltage -10 - - µs VRERINT_s(2) Internal reference voltage spread over the temperature range VDD = 3V ± 10mV - 3 5 mV TCoeff(2) Temperature coefficient - - 30 50 ppm/°C tSTART(2) Startup time - - 6 10 µs 1. Shortest sampling time can be determined in the application by multiple iterations. 2. Guaranteed by design, not tested in production Table 84. Internal reference voltage calibration values Symbol Parameter Memory address VREFIN_CAL Raw data acquired at temperature of 30 °C VDDA = 3.3 V 0x1FFF 7A2A - 0x1FFF 7A2B Table 85. DAC characteristics Symbol Parameter Min Typ Max Unit Comments VDDA Analog supply voltage 1.7(1) -3.6 V - VREF+ Reference supply voltage 1.7(1) -3.6 V VREF+ ≤VDDA VSSA Ground 0 - 0 V - |
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