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STM32F756VG датащи(PDF) 139 Page - STMicroelectronics |
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STM32F756VG датащи(HTML) 139 Page - STMicroelectronics |
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139 / 228 page ![]() DocID027589 Rev 4 139/228 STM32F756xx Electrical characteristics 196 The failure is indicated by an out of range parameter: ADC error above a certain limit (>5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of – 5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency deviation). Negative induced leakage current is caused by negative injection and positive induced leakage current by positive injection. The test results are given in Table 55. Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. 5.3.17 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 56: I/O static characteristics are derived from tests performed under the conditions summarized in Table 17. All I/Os are CMOS and TTL compliant. Table 55. I/O current injection susceptibility(1) Symbol Description Functional susceptibility Unit Negative injection Positive injection IINJ Injected current on BOOT pin − 0NA mA Injected current on NRST pin − 0NA Injected current on PA0, PC0 pins − 0NA Injected current on any other FT pin − 5NA Injected current on any other pins − 5+5 1. NA = not applicable . Table 56. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL FT, TTa and NRST I/O input low level voltage 1.7 V≤VDD≤3.6 V - - 0.35VDD − 0.04 (1) V 0.3VDD(2) BOOT I/O input low level voltage 1.75 V≤VDD ≤3.6 V, – 40 °C≤TA ≤105 °C -- 0.1VDD+0.1(1) 1.7 V≤VDD ≤3.6 V, 0 °C≤TA ≤105 °C -- |
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