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STM32F756VG датащи(PDF) 134 Page - STMicroelectronics

номер детали STM32F756VG
подробное описание детали  Up to 25 communication interfaces
PDF  228 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32F756VG датащи(HTML) 134 Page - STMicroelectronics

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Electrical characteristics
STM32F756xx
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DocID027589 Rev 4
Figure 37. PLL output clock waveforms in down spread mode
5.3.13
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Table 47. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
Supply current
Write / Erase 8-bit mode, VDD = 1.7 V
-
14
-
mA
Write / Erase 16-bit mode, VDD = 2.1 V
-
17
-
Write / Erase 32-bit mode, VDD = 3.3 V
-
24
-
Table 48. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16
100(2)
µs
tERASE32KB Sector (32 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
400
800
ms
Program/erase parallelism
(PSIZE) = x 16
-
250
600
Program/erase parallelism
(PSIZE) = x 32
-
200
500
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
1100
2400
ms
Program/erase parallelism
(PSIZE) = x 16
-
800
1400
Program/erase parallelism
(PSIZE) = x 32
-
500
1100



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