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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F756VG датащи(PDF) 128 Page - STMicroelectronics |
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STM32F756VG датащи(HTML) 128 Page - STMicroelectronics |
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128 / 228 page  Electrical characteristics STM32F756xx 128/228 DocID027589 Rev 4 5.3.10 Internal clock source characteristics The parameters given in Table 41 and Table 42 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator Figure 34. HSI deviation versus temperature 1. Guaranteed by characterization results. Table 41. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Guaranteed by characterization results. − 8-4.5 % TA = –10 to 85 °C(3) − 4- 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. − 1- 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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