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STM32F217VG датащи(PDF) 165 Page - STMicroelectronics

номер детали STM32F217VG
подробное описание детали  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32F217VG датащи(HTML) 165 Page - STMicroelectronics

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DocID17050 Rev 9
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STM32F21xxx
Revision history
174
22-Apr-2011
4
(continued)
Updated Typical and maximum current consumption conditions, as
well as Table 20: Typical and maximum current consumption in Run
mode, code with data processing running from Flash memory (ART
accelerator disabled) and Table 19: Typical and maximum current
consumption in Run mode, code with data processing running from
Flash memory (ART accelerator enabled) or RAM. Added Figure 21,
Figure 22, Figure 23, and Figure 24.
Updated Table 21: Typical and maximum current consumption in Sleep
mode, and added Figure 25 and Figure 26.
Updated Table 23: Typical and maximum current consumptions in
Standby mode and Table 24: Typical and maximum current
consumptions in VBAT mode.
Updated Table 22: Typical and maximum current consumptions in Stop
mode. Added Figure 27: Typical current consumption vs temperature
in Stop mode.
Updated Table 23: Typical and maximum current consumptions in
Standby mode and Table 24: Typical and maximum current
consumptions in VBAT mode.
Updated On-chip peripheral current consumption conditions and
Table 25: Peripheral current consumption.
Updated tWUSTDBY and tWUSTOP, and added Note 3 in Table 26: Low-
power mode wakeup timings.
Maximum fHSE_ext and minimum tw(HSE) values updated in Table 27:
High-speed external user clock characteristics.
Updated C and gm in Table 29: HSE 4-26 MHz oscillator
characteristics. Updated RF, I2, gm, and tsu(LSE) in Table 30: LSE
oscillator characteristics (fLSE = 32.768 kHz).
Added Note 3 and updated ACCHSI, IDD(HSI) and tsu(HSI) in Table 31:
HSI oscillator characteristics. Added Figure 32: ACCHSI versus
temperature
Updated fLSI, tsu(LSI) and IDD(LSI) in Table 32: LSI oscillator
characteristics.
Table 33: Main PLL characteristics: removed note 1, updated tLOCK,
jitter, IDD(PLL) and IDDA(PLL), added Note 2 for fPLL_IN minimum and
maximum values.
Table 34: PLLI2S (audio PLL) characteristics: removed note 1,
updated tLOCK, jitter, IDD(PLLI2S) and IDDA(PLLI2S), added Note 2 for
fPLLI2S_IN minimum and maximum values.
Added Note 1 in Table 35: SSCG parameters constraint.
Updated Table 36: Flash memory characteristics. Modified Table 37:
Flash memory programming and added Note 1 for tprog. Updated tprog
and added Note 1 in Table 38: Flash memory programming with VPP.
Modified Figure 37: Recommended NRST pin protection.
Updated Table 41: EMI characteristics and EMI monitoring conditions
in Section : Electromagnetic Interference (EMI)g.
Added Note 2 related to VESD(HBM)in Table 42: ESD absolute
maximum ratings.
Added Section 6.3.15: I/O current injection characteristics.
Updated Table 45: I/O static characteristics. Modified maximum
frequency values and conditions in Table 47: I/O AC characteristics.
Table 93. Document revision history (continued)
Date
Revision
Changes



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