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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F217VG датащи(PDF) 146 Page - STMicroelectronics |
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STM32F217VG датащи(HTML) 146 Page - STMicroelectronics |
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146 / 175 page  Electrical characteristics STM32F21xxx 146/175 DocID17050 Rev 9 Figure 70. NAND controller waveforms for common memory read access Figure 71. NAND controller waveforms for common memory write access Table 81. Switching characteristics for NAND Flash read cycles(1)(2) 1. CL = 30 pF. 2. Based on characterization, not tested in production. Symbol Parameter Min Max Unit tw(N0E) FSMC_NOE low width 4THCLK- 1 4THCLK+ 2 ns tsu(D-NOE) FSMC_D[15-0] valid data before FSMC_NOE high 9- ns th(NOE-D) FSMC_D[15-0] valid data after FSMC_NOE high 3 - ns td(ALE-NOE) FSMC_ALE valid before FSMC_NOE low - 3THCLK ns th(NOE-ALE) FSMC_NWE high to FSMC_ALE invalid 3THCLK+ 2 - ns FSMC_NWE FSMC_NOE FSMC_D[15:0] tw(NOE) tsu(D-NOE) th(NOE-D) ai14912c ALE (FSMC_A17) CLE (FSMC_A16) FSMC_NCEx td(ALE-NOE) th(NOE-ALE) tw(NWE) th(NWE-D) tv(NWE-D) ai14913c FSMC_NWE FSMC_NOE FSMC_D[15:0] td(D-NWE) ALE (FSMC_A17) CLE (FSMC_A16) FSMC_NCEx td(ALE-NOE) th(NOE-ALE) |
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