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STM32F217VG датащи(PDF) 122 Page - STMicroelectronics

номер детали STM32F217VG
подробное описание детали  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
PDF  175 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM32F217VG датащи(HTML) 122 Page - STMicroelectronics

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Electrical characteristics
STM32F21xxx
122/175
DocID17050 Rev 9
Equation 1: RAIN max formula
The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of
sampling periods defined in the ADC_SMPR1 register.
a
Note:
ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
Section 6.3.16 does not affect the ADC accuracy.
fS(2)
Sampling rate
(fADC = 30 MHz)
12-bit resolution
Single ADC
-
-
2
Msps
12-bit resolution
Interleave Dual ADC
mode
--
3.75
Msps
12-bit resolution
Interleave Triple ADC
mode
-
-
6
Msps
IVREF+(2)
ADC VREF DC current
consumption in conversion mode
-300
500
µA
IVDDA(2)
ADC VDDA DC current
consumption in conversion mode
-1.6
1.8
mA
1. It is recommended to maintain the voltage difference between VREF+ and VDDA below 1.8 V.
2. Based on characterization, not tested in production.
3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA.
4. RADC maximum value is given for VDD=1.8 V, and minimum value for VDD=3.3 V.
5. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 65.
Table 65. ADC characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 66. ADC accuracy (1)
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
Symbol
Parameter
Test conditions
Typ
Max(2)
2. Based on characterization, not tested in production.
Unit
ET
Total unadjusted error
fPCLK2 = 60 MHz,
fADC = 30 MHz, RAIN < 10 kΩ,
VDDA = 1.8 to 3.6 V
±2
±5
LSB
EO
Offset error
±1.5
±2.5
EG
Gain error
±1.5
±3
ED
Differential linearity error
±1
±2
EL
Integral linearity error
±1.5
±3
RAIN
k0.5
()
fADC CADC
2
N
2
+
()
ln
×
×
--------------------------------------------------------------
RADC
=



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