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STM32F215RG датащи(PDF) 110 Page - STMicroelectronics

номер детали STM32F215RG
подробное описание детали  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
PDF  173 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM32F215RG датащи(HTML) 110 Page - STMicroelectronics

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Electrical characteristics
STM32F21xxx
110/173
Doc ID 17050 Rev 8
Figure 43.
USB OTG FS timings: definition of data signal rise and fall time
USB HS characteristics
Table 56 shows the USB HS operating voltage.
Table 55.
USB OTG FS electrical characteristics(1)
1.
Guaranteed by design, not tested in production.
Driver characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
tr
Rise time(2)
2.
Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 50 pF
420
ns
tf
Fall time(2)
CL = 50 pF
4
20
ns
trfm
Rise/ fall time matching
tr/tf
90
110
%
VCRS
Output signal crossover voltage
1.3
2.0
V
Table 56.
USB HS DC electrical characteristics
Symbol
Parameter
Min.(1)
1.
All the voltages are measured from the local ground potential.
Max.(1)
Unit
Input level
VDD
USB OTG HS operating voltage
2.7
3.6
V
Table 57.
Clock timing parameters
Parameter(1)
1.
Guaranteed by design, not tested in production.
Symbol
Min
Nominal
Max
Unit
Frequency (first transition)
8-bit ±10%
FSTART_8BIT
54
60
66
MHz
Frequency (steady state) ±500 ppm
FSTEADY
59.97
60
60.03
MHz
Duty cycle (first transition)
8-bit ±10%
DSTART_8BIT
40
50
60
%
Duty cycle (steady state) ±500 ppm
DSTEADY
49.975
50
50.025
%
Time to reach the steady state frequency and
duty cycle after the first transition
TSTEADY
--
1.4
ms
Clock startup time after the
de-assertion of SuspendM
Peripheral
TSTART_DEV
--
5.6
ms
Host
TSTART_HOST
--
-
PHY preparation time after the first transition
of the input clock
TPREP
--
-
µs
ai14137
tf
Differen tial
data lines
VSS
VCRS
tr
Crossover
points



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