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IRFH5250DPBF датащи(PDF) 1 Page - International Rectifier |
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IRFH5250DPBF датащи(HTML) 1 Page - International Rectifier |
1 / 8 page January 21, 2013 IRFH5250DPbF HEXFET® Power MOSFET Notes through are on page 8 Features and Benefits www.irf.com 1 Applications Synchronous MOSFET for high frequency buck converters Features Benefits PQFN 5X6 mm Note Form Quantity IRFH5250DTRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5250DTR2PBF PQFN 5mm x 6mm Tape and Reel 400 Orderable part number Package Type Standard Pack VDS 25 V RDS(on) max (@VGS = 10V) 1.4 m VSD max (@IS = 5.0A) trr (typical) 27 ns ID (@Tmb = 25°C) 100 h A 0.6 V Low RDSon (<1.4m ) Lower Conduction Losses Schottky Intrinsic Diode with Low Forward Voltage Lower Switching Losses Low Thermal Resistance to PCB (<0.8°C/W) Enable better thermal dissipation 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ Tmb = 25°C Continuous Drain Current, VGS @ 10V ID @ Tmb = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation g PD @Tmb = 25°C Power Dissipation g Linear Derating Factor g W/°C TJ Operating Junction and TSTG Storage Temperature Range 25 32 100 h V W A °C -55 to + 150 3.6 0.029 156 Max. 40 100 h 400 ± 20 |
Аналогичный номер детали - IRFH5250DPBF |
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Аналогичное описание - IRFH5250DPBF |
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