IRFH5250DPBF datasheet(6/8 Pages) IRF

номер детали	IRFH5250DPBF

подробное описание детали	Synchronous MOSFET for high frequency buck converters

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производитель	IRF [International Rectifier]

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IRFH5250DPbF

6

www.irf.com

January 21, 2013

Fig 15.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Fig 18a. Gate Charge Test Circuit

Fig 18b. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

1K

VCC

DUT

0

L

S

Fig 16b. Unclamped Inductive Waveforms

Fig 16a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01



tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

VDS

Pulse Width µs

Duty Factor

RD

VGS

RG

D.U.T.

10V

+

-VDD

VGS

CircuitLayoutConsiderations

Low Stray Inductance

Ground Plane

LowLeakageInductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

-

RG

VDD

dv/dt controlled by RG

Driver same type as D.U.T.

ISD controlled by Duty Factor "D"

D.U.T. - Device Under Test

D.U.T

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