поискавой системы для электроныых деталей |
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IRFH5250DPBF датащи(PDF) 4 Page - International Rectifier |
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IRFH5250DPBF датащи(HTML) 4 Page - International Rectifier |
4 / 8 page IRFH5250DPbF 4 www.irf.com January 21, 2013 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base Fig 8. Maximum Safe Operating Area Fig 9. Maximum Drain Current vs. CaseTemperature Fig 7. Typical Source-Drain Diode Forward Voltage Fig 10. Threshold Voltage vs. Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1.0 10 100 1000 TJ = 25°C TJ = 150°C VGS = 0V -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.5 1.0 1.5 2.0 2.5 3.0 ID = 150μA ID = 250μA ID = 1.0mA ID = 1.0A 25 50 75 100 125 150 TC , Case Temperature (°C) 0 50 100 150 200 250 300 Limited By Package 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 10000 Tc = 25°C Tj = 150°C Single Pulse 10msec 1msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec DC 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) 0.0001 0.001 0.01 0.1 1 10 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc |
Аналогичный номер детали - IRFH5250DPBF |
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Аналогичное описание - IRFH5250DPBF |
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