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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFH5250DPBF датащи(PDF) 2 Page - International Rectifier |
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IRFH5250DPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFH5250DPbF 2 www.irf.com January 21, 2013 S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V VDSS/TJ Breakdown Voltage Temp. Coefficient ––– -8.0 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.0 1.4 ––– 1.7 2.2 VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V VDS = VGS, ID = 150μA VGS(th) Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 500 μA ––– ––– 5.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 120 ––– ––– S Qg Total Gate Charge ––– 83 ––– nC Qg Total Gate Charge ––– 39 59 Qgs1 Pre-Vth Gate-to-Source Charge ––– 11 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 6.1 ––– Qgd Gate-to-Drain Charge ––– 12 ––– Qgodr Gate Charge Overdrive ––– 9.9 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 18.1 ––– Qoss Output Charge ––– 36 ––– nC RG Gate Resistance ––– 1.4 ––– td(on) Turn-On Delay Time ––– 23 ––– tr Rise Time ––– 72 ––– td(off) Turn-Off Delay Time ––– 23 ––– tf Fall Time ––– 24 ––– Ciss Input Capacitance ––– 6115 ––– Coss Output Capacitance ––– 1730 ––– Crss Reverse Transfer Capacitance ––– 610 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 0.6 V VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 27 41 ns Qrr Reverse Recovery Charge ––– 51 77 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance MOSFET symbol nA ns A pF nC VDS = 13V ––– VGS = 20V VGS = -20V ––– ––– 400 ––– ––– 100 Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 10mA VGS = 10V, ID = 50A e VDS = 20V, VGS = 0V VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V VGS = 10V, VDS = 13V, ID = 50A VGS = 0V VDS = 13V Conditions Max. 470 50 ƒ = 1.0MHz TJ = 25°C, IF = 50A, VDD = 13V di/dt = 335A/μs eà TJ = 25°C, IS = 50A, VGS = 0V e showing the integral reverse p-n junction diode. TJ = 25°C, IS = 5.0A, VGS = 0V e VGS = 4.5V, ID = 50A e VGS = 4.5V Typ. ––– RG=1.8 VDS = 13V, ID = 50A VDS = 20V, VGS = 0V, TJ = 125°C m ID = 50A ID = 50A Thermal Resistance Parameter Typ. Max. Units RJC-mb Junction-to-Mounting Base 0.5 0.8 RJC (Top) Junction-to-Case f ––– 15 °C/W RJA Junction-to-Ambient g ––– 35 RJA (<10s) Junction-to-Ambient g ––– 22 |
Аналогичный номер детали - IRFH5250DPBF |
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Аналогичное описание - IRFH5250DPBF |
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