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STM32F303 датащи(PDF) 118 Page - STMicroelectronics

номер детали STM32F303
подробное описание детали  ARM Cortex-M4F 32b MCUFPU, up to 256KB Flash48KB SRAM
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STM32F303 датащи(HTML) 118 Page - STMicroelectronics

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Electrical characteristics
STM32F302xx/STM32F303xx
118/133
Doc ID 023353 Rev 5
6.3.22
Temperature sensor characteristics
6.3.23
VBAT monitoring characteristics
Table 73.
TS characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL
(1)
1.
Guaranteed by design, not tested in production.
VSENSE linearity with temperature
-
±1
±2°C
Avg_Slope(1) Average slope
4.0
4.3
4.6
mV/°C
V25
Voltage at 25 °C
1.34
1.43
1.52
V
tSTART
(1)
Startup time
4
-
10
µs
TS_temp
(1)(2)
2.
Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when reading the
temperature
2.2
-
-
µs
Table 74.
Temperature sensor calibration values
Calibration value name
Description
Memory address
TS_CAL1
TS ADC raw data acquired at
temperature of 30 °C,
VDDA= 3.3 V
0x1FFF F7B8 - 0x1FFF F7B9
TS_CAL2
TS ADC raw data acquired at
temperature of 110 °C
VDDA= 3.3 V
0x1FFF F7C2 - 0x1FFF F7C3
Table 75.
VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
2
-
Er(1)
1.
Guaranteed by design, not tested in production.
Error on Q
-1
-
+1
%
TS_vbat
(1)(2)
2.
Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when reading the VBAT
1mV accuracy
2.2
-
-
µs



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