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SPEAR1340 датащи(PDF) 145 Page - STMicroelectronics

номер детали SPEAR1340
подробное описание детали  Dual-core Cortex A9 HMI embedded MPU
PDF  200 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SPEAR1340 датащи(HTML) 145 Page - STMicroelectronics

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SPEAr1340
Electrical characteristics
Doc ID 023063 Rev 4
145/200
To measure RT1 or RT2:
R
TX
V
IH DC
()
V
IL DC
()
–
IV
IH DC
()
()
IV
IL DC
()
()
–
-------------------------------------------------------------
=
1.
Apply VIH(DC) and VIL(DC) to the IOPAD pin separately while the I/O is in input mode
with the ODT enabled.
2.
Measure the current I(VIH(DC)) and I(VIL(DC)) according to the following equation:
To measure DeltaVM:
DeltaV
M
2V
M
×
V
DDDDR
–
V
DDDDR
-------------------------------------------------
⎝⎠
⎛⎞
100
×
=
1.
Measure voltage at the IOPAD pin while the I/O is in input mode with the ODT enabled.
2.
Calculate DeltaVM according to the following equation:
Table 52.
DDR2/DDR3 pseudo-differential receiver AC and DC characteristics
Symbol
Parameter
DDR2
DDR3
Unit
Min
Typ
Max
Min
Typ
Max
VDD
DDR
DDR2/DDR3 supply
voltage
1.71.81.91.4
1.51.6
V
VREF
Voltage reference
0.49 *
VDD DDR
0.5 *
VDD DDR
0.51 *
VDD DDR
0.49 *
VDD DDR
0.5 *
VDD DDR
0.51 *
VDD DDR
V
VIH(AC)
High level input
voltage
(1)
-
(1)
VREF + 0.1
-
(1)
V
VIL(AC)
Low level input
voltage
-
(1)
-VREF - 0.1
V
VIH(DC)
High level input
voltage
-
0.8 *
VDD DDR
-
(1)
V
VIL(DC)
Low level input
voltage
-
(1)
-
0.2 *
VDD DDR
V
1.
No data available in JEDEC update.
Table 53.
DDR2/DDR3 on-die termination (ODT) DC characteristics
Symbol
Parameter
Min
Typ
Max
Unit
RT1 (DDR2)
Lower effective impedance value for DDR2
60
75
90
Ω
RT2 (DDR2)
Higher effective impedance value for DDR2
120
150
180
Ω
RT1 (DDR3)
Lower effective impedance value for DDR3
53 (60-12%)
60
69 (60+15%)
Ω
RT2 (DDR3)
Higher effective impedance value for DDR3
106 (120-12%)
120
138 (120+15%)
Ω
DeltaVM
Deviation of VM with respect to VDD DDR/2
-5
-
1
%



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