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ST10F272Z2T3 датащи(PDF) 163 Page - STMicroelectronics

номер детали ST10F272Z2T3
подробное описание детали  16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
PDF  189 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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ST10F272Z2T3 датащи(HTML) 163 Page - STMicroelectronics

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ST10F272Z2
Electrical characteristics
163/189
The given values of CA do not include the stray capacitance of the package and of the
printed circuit board: the negative resistance values are calculated assuming additional 5pF
to the values in the table. The crystal shunt capacitance (C0) and the package capacitance
between XTAL1 and XTAL2 pins is globally assumed equal to 10pF.
The external resistance between XTAL1 and XTAL2 is not necessary, since already present
on the silicon.
25.8.12
32 kHz oscillator specifications
VDD = 5 V ± 10 %, VSS = 0 V, TA = –40 to +125 °C
1.
At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started,
the current biasing is reduced to lower the power consumption of the system.
2.
Not 100% tested, guaranteed by design characterization.
Figure 51.
32kHz crystal oscillator connection diagram
Table 74.
Main oscillator negative resistance (module)
CA = 15 pF
CA = 25 pF
CA = 35 pF
min.
typ.
max.
min.
typ.
max.
min.
typ.
max.
4 MHz
545
1035
550
1050
430
850
8 MHz
240
450
170
350
120
250
Table 75.
32kHz oscillator characteristics
Symbol
Parameter
Conditions
Value
Unit
min.
typ.
max.
gm32
Oscillator Transconductance 1)
Start-up
20
31
50
µA/V
Normal run
8
17
30
µA/V
VOSC32 Oscillation Amplitude
2)
Peak to Peak
0.5
1.0
2.4
V
VAV32
Oscillation Voltage level 2)
Sine wave middle
0.7
0.9
1.2
V
tSTUP32 Oscillator Start-up Time
2)
Stable VDD
–15
s
CA
CA
crystal
ST10F272Z2



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