ATtiny13A datasheet(113/174 Pages) ATMEL

113 / 174 page

113

8126D–AVR–11/09

ATtiny13A

Note:

a = address high bits, b = address low bits, d = data in high bits, e = data in low bits, p = data out high bits, q = data out low bits,

x = don’t care, 1 = Lock Bit1, 2 = Lock Bit2, 3 = CKSEL0 fuse, 4 = CKSEL1 fuse, 5 = SUT0 fuse, 6 = SUT1 fuse, 7 = CKDIV8,

fuse, 8 = WDTON fuse, 9 = EESAVE fuse, A = SPIEN fuse, B = RSTDISBL fuse, C = BODLEVEL0 fuse, D= BODLEVEL1 fuse,

E = MONEN fuse, F = SELFPRGEN fuse

Note:

The EEPROM is written page-wise. But only the bytes that are loaded into the page are actually written to the EEPROM. Page-

wise EEPROM access is more efficient when multiple bytes are to be written to the same page. Note that auto-erase of

EEPROM is not available in High-voltage Serial Programming, only in SPI Programming.

17.8 Considerations for Efficient Programming

The loaded command and address are retained in the device during programming. For efficient

programming, the following should be considered.

• The command needs only be loaded once when writing or reading multiple memory

locations.

• Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the

EESAVE fuse is programmed) and Flash after a Chip Erase.

• Address High byte needs only be loaded before programming or reading a new 256 word

window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes

reading.

17.8.1

Chip Erase

The Chip Erase will erase the Flash and EEPROM(1) memories plus lock bits. The lock bits are

not reset until the Program memory has been completely erased. The fuse bits are not changed.

A Chip Erase must be performed before the Flash and/or EEPROM are re-programmed.

1. Load command “Chip Erase” (see Table 17-13 on page 111).

2. Wait after Instr. 3 until SDO goes high for the “Chip Erase” cycle to finish.

3. Load Command “No Operation”.

Note:

1. The EEPROM memory is preserved during Chip Erase if the EESAVE fuse is programmed.

Read Signature

Bytes

SDI

SII

SDO

0_0000_1000_00

0_0100_1100_00

x_xxxx_xxxx_xx

0_0000_00bb_00

0_0000_1100_00

x_xxxx_xxxx_xx

0_0000_0000_00

0_0110_1000_00

x_xxxx_xxxx_xx

0_0000_0000_00

0_0110_1100_00

q_qqqq_qqqx_xx

Repeats Instr 2 4 for each

signature byte address.

Read

Calibration Byte

SDI

SII

SDO

0_0000_1000_00

0_0100_1100_00

x_xxxx_xxxx_xx

0_0000_000b_00

0_0000_1100_00

x_xxxx_xxxx_xx

0_0000_0000_00

0_0111_1000_00

x_xxxx_xxxx_xx

0_0000_0000_00

0_0111_1100_00

p_pppp_pppx_xx

Load “No

Operation”

Command

SDI

SII

SDO

0_0000_0000_00

0_0100_1100_00

x_xxxx_xxxx_xx

Table 17-13. High-Voltage Serial Programming Instruction Set for ATtiny13A (Continued)

Instruction

Instruction Format

Operation Remarks

Instr.1/5

Instr.2/6

Instr.3

Instr.4

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