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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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R32C152 датащи(PDF) 104 Page - Renesas Technology Corp |
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R32C152 датащи(HTML) 104 Page - Renesas Technology Corp |
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104 / 133 page  REJ03B0231-0102 Rev.1.02 Nov 30, 2009 Page 104 of 130 R32C/152 Group 5. Electrical Characteristics Timing Requirements (VCC = 3.0 to 5.5 V, VSS = 0 V, and Ta =Topr, unless otherwise noted) Figure 5.5 Flash Memory CPU Rewrite Mode Timing Table 5.15 Flash Memory CPU Rewrite Mode Timing Symbol Characteristics Value Unit Min. Max. tcR Read cycle time 200 ns tsu(S-R) Chip-select setup time for read 200 ns th(R-S) Chip-select hold time after read 0ns tsu(A-R) Address setup time for read 200 ns th(R-A) Address hold time after read 0ns tw(R) Read pulse width 100 ns tcW Write cycle time 200 ns tsu(S-W) Chip-select setup time for write 0ns th(W-S) Chip-select hold time after write 30 ns tsu(A-W) Address setup time for write 0ns th(W-A) Address hold time after write 30 ns tw(W) Write pulse width 50 ns CS0 A23 to A0, BC0 to BC3 RD t h(R-S) Read cycle t w(R) t su(S-R) t h(R-A) t su(A-R) Write cycle CS0 to CS3 A23 to A0, BC0 to BC3 WR t h(W-S) t w(W) t su(S-W) t h(W-A) t su(A-W) t cW t cR |
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