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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ATmega16 датащи(PDF) 276 Page - ATMEL Corporation |
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ATmega16 датащи(HTML) 276 Page - ATMEL Corporation |
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276 / 357 page  276 2466S–AVR–05/09 ATmega16(L) Serial Programming Instruction set Table 116 on page 276 and Figure 137 on page 277 describes the Instruction set. Table 115. Minimum Wait Delay before Writing the Next Flash or EEPROM Location Symbol Minimum Wait Delay t WD_FUSE 4.5 ms tWD_FLASH 4.5 ms t WD_EEPROM 9.0 ms tWD_ERASE 9.0 ms Table 116. Serial Programming Instruction Set (Hexadecimal values) Instruction(1)/Operation Instruction Format Byte 1 Byte 2 Byte 3 Byte4 Programming Enable $AC $53 $00 $00 Chip Erase (Program Memory/EEPROM) $AC $80 $00 $00 Poll RDY/BSY $F0 $00 $00 data byte out Load Instructions Load Extended Address byte(1) $4D $00 Extended adr $00 Load Program Memory Page, High byte $48 adr MSB adr LSB high data byte in Load Program Memory Page, Low byte $40 adr MSB adr LSB low data byte in Load EEPROM Memory Page (page access)(1) $C1 $00 adr LSB data byte in Read Instructions Read Program Memory, High byte $28 adr MSB adr LSB high data byte out Read Program Memory, Low byte $20 adr MSB adr LSB low data byte out Read EEPROM Memory $A0 adr MSB adr LSB data byte out Read Lock bits $58 $00 $00 data byte out Read Signature Byte $30 $00 0000 000aa data byte out Read Fuse bits $50 $00 $00 data byte out Read Fuse High bits $58 $08 $00 data byte out Read Extended Fuse Bits $50 $08 $00 data byte out Read Calibration Byte $38 $00 $0b00 000bb data byte out Write Instructions Write Program Memory Page $4C 000a aaaa aa00 0000 $00 Write EEPROM Memory $C0 adr MSB adr LSB data byte in Write EEPROM Memory Page (page access)(1) $C2 adr MSB adr LSB $00 Write Lock bits $AC $E0 $00 data byte in Write Fuse bits $AC $A0 $00 data byte in Write Fuse High bits $AC $A8 $00 data byte in Write Extended Fuse Bits $AC $A4 $00 data byte in |
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