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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TPS658620ZQZT датащи(PDF) 12 Page - Texas Instruments |
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TPS658620ZQZT датащи(HTML) 12 Page - Texas Instruments |
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12 / 104 page  2.6 ELECTRICAL CHARACTERISTICS Current range, (SM3REF) O(SM3) FB3 V I = R TPS658620 Advanced Power Management Unit SLVS993 – OCTOBER 2009 www.ti.com over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SM3 BOOST CONVERTER – CONTROL CIRCUIT AND POWER STAGE VVIN(SM3) Input Voltage range V(VIN) 2.5 6.5 V VO(SM3) Output voltage range V(SM3) VVIN(SM3) 26.5 V V(OVP3) Output over-voltage trip OVP detected at V(SM3) > V(OVP3) 26.5 28 29 V OVP not detected at VHYS(OVP3) Output over-voltage hysteresis 1.8 V V(SM3) < V(OVP3) – VHYS(OVP3) 238 248 258 mV V(FB3) below regulation point at V(FB3) < V(SM3REF) FB3 voltage sense threshold V(SM3REF) 1.237 1.25 1.263 V IO(SM3) LED current 0 25 mA D(SM3SW) = 0% to 99.96%, set LED switch duty cycle, selectable D(SM3SW) Duty cycle range via I2C, 2048 steps 0.05% % via I2C minimum step 2048 pulses within repetition rate time, F(REP_SM3)TYP = 550Hz, Hz LED switch duty cycle pattern repetition rate set via I2C 366Hz, 275Hz or 220Hz F(REP_SM3) repetition rate, selectable via I2C Total accuracy, relative to F(REP_SM3)TYP –12% 12% RDSON(SM3SW) LED switch FET on-resistance V(VIN)=3.8 V; I(SM3SW)=20 mA 1 2 Ω ILKG(SM3SW) LED switch FET leakage 1 4 µA RDSON(L3) Power stage FET on-resistance V(VIN)=3.8 V; I(L3)=200 mA 300 600 m Ω ILKG(L3) Power stage FET leakage 1 4 µA IMAX(L3) Power stage FET current limit 2.5V< V(IN) <5.5V 400 500 600 mA Maximum on time detection TSM3PWR(ON) 5 6 15 µs threshold Minimum off time detection TSM3PWR(OFF) 310 400 480 ns threshold HIGH/LOW BRIGHTNESS CONTROL RDSON(ISM3G) Output buffer switch on resistance V(VIN)=2.5V, I(ISM3G)=25mA 1 2 Ω ILKG(ISM3G) Leakage current Hi-Z mode, V(ISM3G)=5V 1 µA SWITCHING FREQUENCY FSM3 Maximum switching frequency At nominal load 1 MHz GPIO1-4 – DIGITAL OUTPUT BUFFER IOL = 3 mA 0.6 VOL(GPIO) Low level output voltage V IOL = 10 µA 0.1 IOH = –3 mA 1.5 VOH(GPIO) High level output voltage GPIO V IOH = –10 µA 1.8 IOL(GPIO) Maximum low level sink current V(GPIOn)=2.5V 5 mA IOH(GPIO) Maximum high level source current V(GPIOn)=0V –5 mA GPIO1-4 – DIGITAL INPUT BUFFER VIL(GPIO) Low level input voltage 0.4 V VIH(GPIO) High level input voltage 1.15 V V(GPIOn)=5V or 0V, GPIO configured, ILKG(GPIO) Input current 0.5 µA GPIO input current sink OFF GPIO1-4 - INPUT CURRENT SINK ON if TPS658620 is not in sleep mode and ISNK(GPIO) Input current sink 2.5 3.5 µA GPIO is not configured. Electrical Specifications 12 Submit Documentation Feedback |
Аналогичный номер детали - TPS658620ZQZT |
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Аналогичное описание - TPS658620ZQZT |
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