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M32C/86 датащи(PDF) 456 Page - Renesas Technology Corp |
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M32C/86 датащи(HTML) 456 Page - Renesas Technology Corp |
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456 / 505 page ![]() Page 433 9 7 4 f o 5 0 0 2 , 8 0 . p e S 0 0 . 1 . v e R 0 0 1 0 - 4 0 2 0 B 9 0 J E R ) T 6 8 / C 2 3 M , 6 8 / C 2 3 M ( p u o r G 6 8 / C 2 3 M 26. Electrical Characteristics (M32C/86) VCC=5V l o b m y Sr e t e m a r a P t n e m e r u s a e M n o i t i d n o C d r a d n a t S t i n U . n i M. x a M d t ) D A - K L C B ( e m i T y a l e D t u p t u O s s e r d d A 8 1s n h t ) D A - K L C B ( ) d r a d n a t s K L C B ( e m i T d l o H t u p t u O s s e r d d A 3 -s n h t ) D A - D R ( ) d r a d n a t s D R ( e m i T d l o H t u p t u O s s e r d d A ) 3 ( 0s n h t ) D A - R W ( ) d r a d n a t s R W ( e m i T d l o H t u p t u O s s e r d d A ) 3 ( ) 1 e t o N (s n d t ) S C - K L C B ( e m i T y a l e D t u p t u O l a n g i S t c e l e S - p i h C 8 1s n h t ) S C - K L C B ( ) d r a d n a t s K L C B ( e m i T d l o H t u p t u O l a n g i S t c e l e S - p i h C 3 -s n h t ) S C - D R ( ) d r a d n a t s D R ( e m i T d l o H t u p t u O l a n g i S t c e l e S - p i h C ) 3 ( 0s n h t ) S C - R W ( ) d r a d n a t s R W ( e m i T d l o H t u p t u O l a n g i S t c e l e S - p i h C ) 3 ( ) 1 e t o N (s n d t ) D R - K L C B ( e m i T y a l e D t u p t u O l a n g i S D R 8 1s n h t ) D R - K L C B ( e m i T d l o H t u p t u O l a n g i S D R 5 -s n d t ) R W - K L C B ( e m i T y a l e D t u p t u O l a n g i S R W 8 1s n h t ) R W - K L C B ( e m i T d l o H t u p t u O l a n g i S R W 5 -s n d t ) R W - B D ( ) d r a d n a t s R W ( e m i T y a l e D t u p t u O a t a D ) 2 e t o N (s n h t ) B D - R W ( ) d r a d n a t s R W ( e m i T d l o H t u p t u O a t a D ) 3 ( ) 1 e t o N (s n w t ) R W ( h t d i W t u p t u O R W ) 2 e t o N (s n td(DB – WR) = f(BCLK) – 20 [ns] th(WR – DB) = f(BCLK) X 2 10 9 – 10 [ns] th(WR – AD) = f(BCLK) X 2 10 9 – 10 [ns] th(WR – CS) = f(BCLK) X 2 10 9 – 10 [ns] tw(WR) = f(BCLK) X 2 10 X n 9 – 15 [ns] 1. Values can be obtained from the following equations, according to BCLK frequency. 2. Values can be obtained from the following equations, according to BCLK frequency and external bus cycles. (if external bus cycle is a φ + bφ, n=(bx2)-1) 10 X m 9 (if external bus cycle is a φ + bφ, m= b) NOTES: 3. tc ns is added when recovery cycle is inserted. See Figure 26.2 Switching Characteristics (VCC=4.2 V to 5.5 V, VSS = 0 V at Topr = –20 to 85oC unless otherwise specified) Table 26.22 Memory Expansion Mode and Microprocessor Mode (when accessing external memory space) |
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