 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
ST723217 датащи(PDF) 156 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
ST723217 датащи(HTML) 156 Page - STMicroelectronics |
|
|
156 / 185 page  ST72321 156/185 EMC CHARACTERISTICS (Cont’d) True Open Drain Pin Protection The centralized protection (4) is not involved in the discharge of the ESD stresses applied to true open drain pads due to the fact that a P-Buffer and diode to VDD are not implemented. An additional local protection between the pad and VSS (5a & 5b) is implemented to completely absorb the posi- tive ESD discharge. Multisupply Configuration When several types of ground (VSS, VSSA, ...) and power supply (VDD, VAREF, ...) are available for any reason (better noise immunity...), the structure shown in Figure 85 is implemented to protect the device against ESD. Figure 83. Positive Stress on a True Open Drain Pad vs. VSS Figure 84. Negative Stress on a True Open Drain Pad vs. VDD Figure 85. Multisupply Configuration IN VDD VSS (1) (2b) (4) OUT VDD VSS (3b) Main path Path to avoid (5a) (5b) IN VDD VSS (1) (2b) (4) OUT VDD VSS (3b) Main path (3b) (3b) VAREF VSSA VAREF VDD VSS BACK TO BACK DIODE BETWEEN GROUNDS VSSA |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
