поискавой системы для электроныых деталей |
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SSR2N60A датащи(PDF) 4 Page - Fairchild Semiconductor |
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SSR2N60A датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature Fig 11. Thermal Response Fig 10. Max. Drain Current vs. Case Temperature Fig 9. Max. Safe Operating Area P DM t 1 t 2 SSR/U2N60A -75 -50 -25 0 25 50 75 100 125 150 175 0.8 0.9 1.0 1.1 1.2 @ Notes : 1. V GS = 0 V 2. I D = 250 µA T J , Junction Temperature [ oC] -75 -50 -25 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 @ Notes : 1. V GS = 10 V 2. I D = 1.0 A T J , Junction Temperature [ oC] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 DC 100 µs 1 ms 10 ms @ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse Operation in This Area is Limited by R DS(on) V DS , Drain-Source Voltage [V] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 T c , Case Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 single pulse 0.2 0.1 0.01 0.02 0.05 D=0.5 @ Notes : 1. Z θ JC(t)=2.87 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM -T C =P DM *Zθ JC(t) t 1 , Square Wave Pulse Duration [sec] |
Аналогичный номер детали - SSR2N60A |
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Аналогичное описание - SSR2N60A |
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