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STM32F301C6 датащи(PDF) 108 Page - STMicroelectronics

номер детали STM32F301C6
подробное описание детали  Arm® Cortex®-M4 32-bit MCUFPU, up to 64 KB Flash, 16 KB SRAM, ADC, DAC, COMP, Op-Amp, 2.0 – 3.6 V
PDF  141 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32F301C6 датащи(HTML) 108 Page - STMicroelectronics

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Electrical characteristics
STM32F301x6 STM32F301x8
108/141
DS9895 Rev 8
Figure 32. ADC accuracy characteristics
Figure 33. Typical connection diagram using the ADC
1. Refer to Table 63 for the values of RAIN.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy
this, fADC should be reduced.
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 12. The 10 nF capacitor
should be ceramic (good quality) and it should be placed as close as possible to the chip.
EO
EG
1LSBIDEAL
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
4095
4094
4093
5
4
3
2
1
0
7
6
1
2
3
456
7
4093 4094 4095 4096
(1)
(2)
ET
ED
EL
(3)
VDDA
VSSA
VDDA
4096
1LSBIDEAL =
MS34980V1
12-bit
converter
Sample and hold ADC
converter
RAIN(1)
AINx
VAIN
Cparasitic
VDD
VT
0.6 V
VT
0.6 V
IL ± 1 μA
RADC
CADC
MS19881V3



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