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IS25LE512MG-RMLA2:PTY датащи(PDF) 188 Page - Integrated Silicon Solution, Inc

номер детали IS25LE512MG-RMLA2:PTY
подробное описание детали  SERIAL FLASH MEMORY 166/133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  194 Pages
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производитель  ISSI [Integrated Silicon Solution, Inc]
домашняя страница  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512MG-RMLA2:PTY датащи(HTML) 188 Page - Integrated Silicon Solution, Inc

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IS25LE512MG
IS25WE512MG
Integrated Silicon Solution, Inc.- www.issi.com
188
Rev. A6
10/02/2025
9.9 PROGRAM/ERASE PERFORMANCE
Symbol
Parameter
Typ
Max
Unit
tEC
Sector Erase Time
4KB
100
300
ms
Block Erase Time
32KB
0.14
0.5
s
64KB
0.17
1.5
256KB
0.68
4.0
Chip Erase Time
140
360
tPP
Page Programming Time
256B
0.3
2.0
ms
512B
0.6
4.0
tBP
First Byte Program
10
70
µs
Note: These parameters are characterized and not 100% tested.
9.10 RELIABILITY CHARACTERISTICS
Parameter
Min
Max
Unit
Test Method
Endurance
100,000
-
Cycles
JEDEC Standard A117
Data Retention
20
-
Years
JEDEC Standard A117
Latch-Up
-100
+100
mA
JEDEC Standard 78
Note: These parameters are characterized and not 100% tested.



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