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IS25LE512MG-RLLA2:PTY датащи(PDF) 183 Page - Integrated Silicon Solution, Inc

номер детали IS25LE512MG-RLLA2:PTY
подробное описание детали  SERIAL FLASH MEMORY 166/133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  194 Pages
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производитель  ISSI [Integrated Silicon Solution, Inc]
домашняя страница  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512MG-RLLA2:PTY датащи(HTML) 183 Page - Integrated Silicon Solution, Inc

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IS25LE512MG
IS25WE512MG
Integrated Silicon Solution, Inc.- www.issi.com
183
Rev. A6
10/02/2025
Symbol
Parameter
Min
Typ(2)
Max
Units
tEC
Sector Erase Time (4Kbyte)
100
300
ms
Block Erase Time (32Kbyte)
0.14
0.5
s
Block Erase time (64Kbyte)
0.17
1.5
s
Block Erase time (256Kbyte)
0.68
4.0
s
Chip Erase Time
140
360
s
tPP
Page Program Time
256byte
0.3
2.0
ms
512byte
0.6
4.0
tRES1(1)
Release deep power down
IS25LE
3
µs
IS25WE
5
tDP(1)
Deep power down
3
µs
tW
Write Status Register time
2
15
ms
tSUS(1)
Suspend to read ready
-
100
µs
TRS(1)
Resume to next suspend
80
-
µs
tSRST(1)
Software Reset recovery time
100
µs
tRESET(1),
RESET# pin low pulse width
100
ns
tHWRST(1),
Hardware Reset recovery time
100
µs
Notes:
1. These parameters are characterized and not 100% tested.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC
= VCC (Typ), TA=25°C.
3. Only applicable as a constraint for a WRITE STATUS REGISTER command when SRWD is set at 1.
4. Values are guaranteed by characterization and not 100% tested in production.
5. tCEH = 500ns (Min.) before Suspend Command (75h/B0h).



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