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IS25LE512M-RLLA3:P-TY датащи(PDF) 170 Page - Integrated Silicon Solution, Inc

номер детали IS25LE512M-RLLA3:P-TY
подробное описание детали  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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производитель  ISSI [Integrated Silicon Solution, Inc]
домашняя страница  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RLLA3:P-TY датащи(HTML) 170 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
170
Rev. A6
06/16/2025
8.67 WRITE VDLR OPERATION (WRVDLR, 4Ah)
Before the Write VDLR (WRVDLR) command can be accepted by the device, a Write Enable (WREN) command
must be issued and decoded by the device. After the Write Enable (WREN) command has been decoded
successfully, the device will set the Write Enable Latch (WEL) to enable the WRVDLR operation.
The WRVDLR command (4Ah) is entered by shifting the instruction and data byte on SI.
CE# must be driven to the logic high state after the eighth (8th) bit of data has been latched. If not, the WRVDLR
command is not executed. As soon as CE# is driven to the logic high state, the WRVDLR operation is initiated
with no delays.
Figure 8.146 WRVDLR Sequence In SPI Mode
Instruction = 4Ah
CE #
SCK
SI
SO
Data In
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
7
3
2
1
0
6
5
4
High Impedence
Figure 8.147 WRVDLR Sequence In QPI Mode
4Ah
0
1
Mode 3
Mode 0
2
3
7:4
3:0
CE#
SCK
IO[3:0]
Data In



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