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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SPSB100 датащи(PDF) 103 Page - STMicroelectronics |
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SPSB100 датащи(HTML) 103 Page - STMicroelectronics |
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103 / 213 page  Symbol Parameter Condition Min Typ Max Unit IIRQ_LK Leakage current VIRQ = 20 V VIO = 3.3 V - - 100 μA IIRQ_LK_5V Leakage current when IRQ is disabled VIRQ = 5.0 V VIO = 5.0 V - - 1 μA RIRQ_PU IRQ internal pull-up resistor for echo VIRQ = 1 V 13 29 55 kΩ tIRQ_react(1) Interrupt reaction time - - 40 µs tIRQ_ECHO_FILT IRQ echo error filter time 91 100 150 µs 1. Guaranteed by scan. 7.19 FIN1 input The voltages are referred to GND and currents are assumed positive, when the current flows into the pin. 3.0 V ≤ VIO ≤ 5.5 V, Tj = -40 °C to 150 °C, unless otherwise specified. Table 45. FIN1 input Symbol Parameter Condition Min Typ Max Unit VFIN1_L Input voltage low threshold 1.0 - - V VFIN1_H Input voltage high threshold - - 2.3 V VFIN1_HYS Input voltage hysteresis 0.2 - - V RFIN1_PU FIN1 pull-up resistor to VIO VIO = 5.0 V VFIN1 = 1.0 V Defined by CR FCCU_STATIC_ERROR bit 13 29 55 kΩ RFIN1_PD FIN1 pull-down resistor to GND VIO = 5.0 V VFIN1 = 1.0 V Defined by CR FCCU_STATIC_ERROR bit 13 29 55 kΩ CFIN1(1) FIN1 input capacitance - - 15 pF 1. Guaranteed by design. 7.20 Timer The voltages are referred to GND and currents are assumed positive, when the current flows into the pin. 6.0 V ≤ VFBB ≤ 29 V, Tj = -40 °C to 150 °C, unless otherwise specified. All timer timings are covered by scan. Table 46. Timer values Symbol Parameter Condition Min Typ Max Unit tON1 Timer on time T1_ENA = 000 (default value) 0.08 0.1 0.14 ms tON2 Timer on time T1_ENA = 001 0.25 0.3 0.39 ms tON3 Timer on time T1_ENA = 010 0.83 1 1.27 ms tON4 Timer on time T1_ENA = 011 8.3 10 12.5 ms tON5 Timer on time T1_ENA = 1xx 16.6 20 25 ms T1 Timer period T1_PER = 000 (default value) 8.3 10 12.5 ms T2 Timer period T1_PER = 001 16.6 20 25 ms SPSB100 Electrical characteristics DS14640 - Rev 2 page 103/213 |
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