 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
L9908 датащи(PDF) 138 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
L9908 датащи(HTML) 138 Page - STMicroelectronics |
|
|
138 / 152 page  Component Min Typ Max Unit Minimum requirement Comment 12 V systems 24 V systems 48 V systems RDC - 4 - mΩ WSL10204L000FEA - REN_BR - 100 - Ω - Optional RFS_FLAG - 100 - Ω - Optional RGHS1n - 47 - Ω - - RGHS2n - 100 - kΩ - - RGLS1n - 47 - Ω - - RGLS2n - 100 - kΩ - - RINHn - 100 - Ω - Optional RINLn - 100 - Ω - Optional RNCS - 100 - Ω - Optional RNDIS - 100 - Ω - Optional RSCLK - 100 - Ω - Optional RSDI - 100 - Ω - Optional RSDO - 100 - Ω - Optional RSHUNTn - 4 - mΩ WSL10204L000FEA - TBR1 - - - - STL225N6F7AG STH275N8F7 - TBR2 - - - - BCP56-16 - TVBP1 - - - - BCP56-16 - THSn - - - - STL225N6F7AG STD105N10F7AG - TLSn - - - - STL225N6F7AG STD105N10F7AG - 6.4 Layout guidelines The following layout guidelines apply to any of the above shown application circuits. • Three separated bulk capacitors CHB1 should be used - one per half bridge. • Three separated ceramic capacitors CHB2 should be used - one per half bridge. • Each of the 3 bulk capacitors CHB1 and each of the 3 ceramic capacitors CHB2 should be assigned to one of the half bridges and should be placed very close to it. • The components within one half bridge should be placed close to each other to reduce stray inductance to a minimum: high-side MOSFET, low-side MOSFET, bulk capacitor CHB1, ceramic capacitor CHB2 and the shunt resistor RSHUNT form a loop that should be as small and tight as possible. The traces should be short and wide. • The three half bridges can be separated; however, when there is one common GND referenced shunt resistor (RDC) for the three half bridges the sources of all low-side MOSFETs should be close to each other and close to the common shunt resistor. • Additional R-C snubber circuits can be placed to attenuate/suppress oscillations during switching of the MOSFETs, there may be one or two snubber circuits per half bridge and components must be low inductive in terms of routing and packaging (ceramic capacitors). • The exposed pad on the backside of the package shall be connected to GND. L9908 Application circuit DS13546 - Rev 5 page 138/152 |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
