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L9945 датащи(PDF) 117 Page - STMicroelectronics

номер детали L9945
подробное описание детали  Automotive fully configurable 8-channel High/Low side MOSFET pre-driver suitable for 12 V and 24 V systems
PDF  144 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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L9945 датащи(HTML) 117 Page - STMicroelectronics

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GCC_override_config
IPU or IPD [mA]
1
1 → 20
5 → 20
Note:
IPU is used to shut down PMOS, while IPD shuts down NMOS.
The GCC override configuration is applied as soon as an OC event is detected. The original GCC configuration is
restored once diagnostics have been read.
6.3.2
Output re-engagement strategy after an OC event
After an OC event, the affected output must be manually re-engaged. There are two reactivation strategies,
configurable via SPI bit prot_config_xx:
•
Output re-engagement with control signal switching event (default);
•
Output re-engagement after diagnostic readout and control signal switching event.
In case of H-Bridge configuration, the prot_config_xx has no effect. Re-engagement is always performed after
diagnostic readout.
Note:
Control signal can be either NONx or SPI_ON_OUTxx, depending on SPI_INPUT_SEL_xx bit
6.3.3
OC sensing strategy
OC detection is performed by sensing the voltage either on an external shunt resistor or between the drain and
the source of the external FET. Detection strategy can be selected on each channel independently by
programming the OC_DS_Shunt_xx bit as follows:
Table 38. OC sensing strategy
OC_DS_Shunt_xx
OC sensing strategy
0
Drain To Source Measurement (DSM)
1
Shunt Measurement
Figure 30. Overcurrent sensing method (example on a LS NMOS)
BATT34
OC_DS_SHUNT = 0 → VDS
OC_DS_SHUNT = 1 → VSH
LS NMOS
DRN3
VBATT
GNSP3
SNGP3
RG
RPD
CM
RM
RSH
GND
DFW
CESD
PGND34
GADG0806171536PS
The following behaviors correspond to the different sensing methods (refer to Figure 31):
L9945
Safety & diagnostics
DS12275 - Rev 10
page 117/144



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