STM32MP151AAA3 datasheet(159/245 Pages) STMICROELECTRONICS

159 / 245 page

DS12500 Rev 1

159/245

STM32MP151A

Electrical characteristics

228

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015 available from the

ST website www.st.com.).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,

executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2

standard which specifies the test board and the pin loading.

6.3.14

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each

sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC

JS-001 and ANSI/ESDA/JEDEC JS-002 standards.

Table 44. EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs.

[fHSE/fCPU]

Unit

8/400 MHz

SEMI

Peak level

VDD = 3.6 V, VDDCORE = 1.2 V, TA = 25 °C,

LFBGA448 package, Fmpuss_ck = 648 MHz,

Fmcu_ck = 209 MHz, M4 core not running,

conforming to IEC61967-2

0.1 to 30 MHz

dBµV

30 to 130 MHz

-1

130 MHz to 1 GHz

1 GHz to 2 GHz

EMI Level

3.5

Table 45. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Packages

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body

model)

TA = +25 °C conforming

to ANSI/ESDA/JEDEC

JS-001

All

1000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA = +25 °C conforming

to ANSI/ESDA/JEDEC

JS-002

All

250

1. Guaranteed by characterization results.

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