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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32G474VC датащи(PDF) 128 Page - STMicroelectronics |
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STM32G474VC датащи(HTML) 128 Page - STMicroelectronics |
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128 / 232 page  Electrical characteristics STM32G474xB STM32G474xC STM32G474xE 128/232 DS12288 Rev 1 Figure 23. HSI48 frequency versus temperature Low-speed internal (LSI) RC oscillator NT jitter Next transition jitter Accumulated jitter on 28 cycles(4) -- +/-0.15(2) -ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(4) -- +/-0.25(2) -ns 1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified. 2. Guaranteed by design. 3. Guaranteed by characterization results. 4. Jitter measurement are performed without clock source activated in parallel. Table 48. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI Frequency VDD = 3.0 V, TA = 30 °C 31.04 - 32.96 kHz VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34 tSU(LSI)(2) LSI oscillator start-up time - - 80 130 μs Table 47. HSI48 oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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