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ST10F271E датащи(PDF) 127 Page - STMicroelectronics |
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ST10F271E датащи(HTML) 127 Page - STMicroelectronics |
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127 / 180 page ![]() ST10F271B/ST10F271E Electrical characteristics 127/180 24 Electrical characteristics 24.1 Absolute maximum ratings Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. During overload conditions (V IN > VDD or VIN < VSS) the voltage on pins with respect to ground (V SS) must not exceed the values defined by the Absolute Maximum Ratings. During Power-on and Power-off transients (including Standby entering/exiting phases), the relationships between voltages applied to the device and the main VDD shall be always respected. In particular power-on and power-off of VAREF shall be coherent with VDD transient, in order to avoid undesired current injection through the on-chip protection diodes. Table 59. Absolute maximum ratings Symbol Parameter Values Unit VDD Voltage on VDD pins with respect to ground (VSS) -0.5 to +6.5 V VSTBY Voltage on VSTBY pin with respect to ground (VSS) -0.5 to +6.5 V VAREF Voltage on VAREF pins with respect to ground (VSS) -0.3 to VDD V VAGND Voltage on VAGND pins with respect to ground (VSS)VSS V VIO Voltage on any pin with respect to ground (VSS)-0.5 to VDD + 0.5 V IOV Input current on any pin during overload condition ± 10 mA ITOV Absolute sum of all input currents during overload condition | 75 | mA TST Storage temperature -65 to +150 °C ESD ESD Susceptibility (Human Body Model) 2000 V |
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