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ST10F272E датащи(PDF) 136 Page - STMicroelectronics |
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ST10F272E датащи(HTML) 136 Page - STMicroelectronics |
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136 / 181 page ![]() Electrical characteristics ST10F272B/ST10F272E 136/181 24.6 Flash characteristics VDD = 5 V ± 10%, V SS = 0 V Table 64. Flash characteristics Parameter Typical Maximum Unit Notes TA = 25°C TA = 125°C 0 cycles(1) 0 cycles(1) 100k cycles Word Program (32-bit) (2) 35 80 290 µs– Double Word Program (64-bit)(2)) 60 150 570 µs– Bank 0 Program (256K) (Double Word Program) 1.6 2.0 3.9 s – Sector Erase (8K) 0.6 0.5 0.9 0.8 1.0 0.9 s not preprogrammed preprogrammed Sector Erase (32K) 1.1 0.8 2.0 1.8 2.7 2.5 s not preprogrammed preprogrammed Sector Erase (64K) 1.7 1.3 3.7 3.3 5.1 4.7 s not preprogrammed preprogrammed Bank 0 Erase (256K) (3) 5.6 4.0 13.6 11.9 19.2 17.5 s not preprogrammed preprogrammed Recovery from Power-Down (tPD) – 40 40 µs (4) Program Suspend Latency (4) –10 10 µs Erase Suspend Latency (4) –30 30 µs Erase Suspend Request Rate (4) 20 20 20 ms Min delay between 2 requests Set Protection (4) 40 90 300 µs 1. The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer). 2. Word and Double Word Programming times are provided as average values derived from a full sector programming time: absolute value of a Word or Double Word Programming time could be longer than the average value. 3. Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the Bank). As ST10F272 implements only one bank, the Bank Erase operation is equivalent to Module and Chip Erase operations. 4. Not 100% tested, guaranteed by Design Characterization. |
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