ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

=

6500 V

=

400 A

Doc. No. 5SYA 1592-01 Jun 07

• Low-loss, rugged SPT chip-set

• Smooth switching SPT chip-set for

good EMC

• High insulation package

• AlSiC base-plate for high power

cycling capability

• AlN substrate for low thermal

resistance

Parameter

Symbol

Conditions

min

max

Unit

Collector-emitter voltage

6500

V

DC collector current

400

A

Peak collector current

800

A

Gate-emitter voltage

-20

20

V

Total power dissipation

7350

W

DC forward current

400

A

Peak forward current

800

A

Surge current

4000

A

IGBT short circuit SOA

≤ 6500 V

≤ 15 V, T

vj

≤ 125 °C

10

µs

Isolation voltage

1 min, f = 50 Hz

10200

V

Junction temperature

125

°C

Junction operating temperature

-40

125

°C

Case temperature

-40

125

°C

Storage temperature

-40

125

°C

Base-heatsink, M6 screws

4

6

Main terminals, M8 screws

8

10

Auxiliary terminals, M4 screws

2

3

Nm

ABB HiPak

TM

IGBT Module

5SNA 0400J650100