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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DSPIC30F3012AT20E/ML датащи(PDF) 164 Page - Microchip Technology |
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DSPIC30F3012AT20E/ML датащи(HTML) 164 Page - Microchip Technology |
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164 / 205 page  dsPIC30F2011/2012/3012/3013 DS70139E-page 162 © 2006 Microchip Technology Inc. FIGURE 20-7: BAND GAP START-UP TIME CHARACTERISTICS TABLE 20-22: BAND GAP START-UP TIME REQUIREMENTS AC CHARACTERISTICS Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for Industrial -40°C ≤ TA ≤ +125°C for Extended Param No. Symbol Characteristic(1) Min Typ(2) Max Units Conditions SY40 TBGAP Band Gap Start-up Time — 40 65 µs Defined as the time between the instant that the band gap is enabled and the moment that the band gap reference voltage is stable. RCON<13> bit Note 1: These parameters are characterized but not tested in manufacturing. 2: Data in “Typ” column is at 5V, 25°C unless otherwise stated. VBGAP Enable Band Gap Band Gap 0V (see Note) Stable Note: Set LVDEN bit (RCON<12>) or FBORPOR<7>set. SY40 |
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