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DSPIC30F3012AT20E/ML датащи(PDF) 156 Page - Microchip Technology

номер детали DSPIC30F3012AT20E/ML
подробное описание детали  High-Performance, 16-Bit Digital Signal Controllers
PDF  205 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

DSPIC30F3012AT20E/ML датащи(HTML) 156 Page - Microchip Technology

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dsPIC30F2011/2012/3012/3013
DS70139E-page 154
© 2006 Microchip Technology Inc.
TABLE 20-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for Industrial
-40°C
≤ TA ≤ +125°C for Extended
Param
No.
Symbol
Characteristic
Min
Typ(1)
Max
Units
Conditions
Data EEPROM Memory(2)
D120
ED
Byte Endurance
100K
1M
—
E/W
-40
°C ≤ TA ≤ +85°C
D121
VDRW
VDD for Read/Write
VMIN
—
5.5
V
Using EECON to Read/Write
VMIN = Minimum operating
voltage
D122
TDEW
Erase/Write Cycle Time
—
2
—
ms
D123
TRETD
Characteristic Retention
40
100
—
Year
Provided no other specifications
are violated
D124
IDEW
IDD During Programming
—
10
30
mA
Row Erase
Program Flash Memory(2)
D130
EP
Cell Endurance
10K
100K
—
E/W
-40
°C ≤ TA ≤ +85°C
D131
VPR
VDD for Read
VMIN
—5.5
V
VMIN = Minimum operating
voltage
D132
VEB
VDD for Bulk Erase
4.5
—
5.5
V
D133
VPEW
VDD for Erase/Write
3.0
—
5.5
V
D134
TPEW
Erase/Write Cycle Time
—
2
—
ms
D135
TRETD
Characteristic Retention
40
100
—
Year
Provided no other specifications
are violated
D136
TEB
ICSP™ Block Erase Time
—
4
—
ms
D137
IPEW
IDD During Programming
—
10
30
mA
Row Erase
D138
IEB
IDD During Programming
—
10
30
mA
Bulk Erase
Note 1:
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
2:
These parameters are characterized but not tested in manufacturing.



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