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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ST72104G2 датащи(PDF) 112 Page - STMicroelectronics |
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ST72104G2 датащи(HTML) 112 Page - STMicroelectronics |
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112 / 140 page  ST72104G, ST72215G, ST72216G, ST72254G 112/140 14.6 MEMORY CHARACTERISTICS Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. 14.6.1 RAM and Hardware Registers 14.6.2 FLASH Program Memory Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg- isters (only in HALT mode). Guaranteed by construction, not tested in production. 2. Data based on characterization results, tested in production at TA=25°C. 3. Up to 16 bytes can be programmed at a time for a 4kBytes FLASH block (then up to 32 bytes at a time for an 8k device) 4. The data retention time increases when the TA decreases. 5. Data based on reliability test results and monitored in production. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode 1) HALT mode (or RESET) 1.6 V Symbol Parameter Conditions Min Typ Max Unit TA(prog) Programming temperature range 2) 025 70 °C tprog Programming time for 1~16 bytes 3) TA=+25°C 8 25 ms Programming time for 4 or 8kBytes TA=+25°C 2.1 6.4 sec tret Data retention 5) TA=+55°C 4) 20 years NRW Write erase cycles 5) TA=+25°C 100 cycles |
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