ST72F324J4TA datasheet(118/167 Pages) STMICROELECTRONICS

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ST72324B

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OPERATING CONDITIONS (Cont’d)

12.4 LVD/AVD CHARACTERISTICS

12.4.1 Operating Conditions with Low Voltage Detector (LVD)

Subject to general operating conditions for TA

Notes:

1. Data based on characterization results, tested in production for ROM devices only.

2. If the medium or low thresholds are selected, the detection may occur outside the specified operating voltage range.

12.4.2 Auxiliary Voltage Detector (AVD) Thresholds

Subject to general operating conditions for TA

1. Data based on characterization results, tested in production for ROM devices only.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIT+(LVD)

Reset release threshold

(VDD rise)

VD level = High in option byte

4.0 1)

4.2

4.5

VD level = Med. in option byte2) 3.55 1)

3.75

4.01)

VD level = Low in option byte2)

2.95 1)

3.15

3.351)

VIT-(LVD)

Reset generation threshold

(VDD fall)

VD level = High in option byte

3.8

4.0

4.25 1)

VD level = Med. in option byte2) 3.351)

3.55

3.751)

VD level = Low in option byte2)

2.81)

3.0

3.15 1)

Vhys(LVD)

LVD voltage threshold hysteresis 1)

VIT+(LVD)-VIT-(LVD)

150

200

250

VtPOR

VDD rise time

Flash devices

µs/V

100 ms/V

8/16K ROM devices

20 ms/V

32K ROM devices

∝ ms/V

tg(VDD)

Filtered glitch delay on VDD

Not detected by the LVD

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIT+(AVD)

⇒0 AVDF flag toggle threshold

(VDD rise)

VD level = High in option byte

4.4 1)

4.6

4.9

VD level = Med. in option byte

VD level = Low in option byte

3.95 1)

3.4 1)

4.15

3.6

4.41)

3.81)

VIT-(AVD)

⇒1 AVDF flag toggle threshold

(VDD fall)

VD level = High in option byte

4.2

4.4

4.65 1)

VD level = Med. in option byte

VD level = Low in option byte

3.751)

3.21)

4.0

3.4

4.2 1)

3.6 1)

Vhys(AVD)

AVD voltage threshold hysteresis

VIT+(AVD)-VIT-(AVD)

200

∆VIT-

Voltage drop between AVD flag set

and LVD reset activated

VIT-(AVD)-VIT-(LVD)

450

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