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STM32H7 датащи(PDF) 109 Page - STMicroelectronics |
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STM32H7 датащи(HTML) 109 Page - STMicroelectronics |
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109 / 357 page ![]() DS12110 Rev 10 109/357 STM32H742xI/G STM32H743xI/G Electrical characteristics (rev Y) 320 6.3.5 Embedded reference voltage The parameters given in Table 28 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 24: General operating conditions. VAVM_0 Analog voltage detector for VDDA threshold 0 Rising edge 1.66 1.71 1.76 V Falling edge 1.56 1.61 1.66 VAVM_1 Analog voltage detector for VDDA threshold 1 Rising edge 2.06 2.12 2.19 Falling edge 1.96 2.02 2.08 VAVM_2 Analog voltage detector for VDDA threshold 2 Rising edge 2.42 2.50 2.58 Falling edge 2.35 2.42 2.49 VAVM_3 Analog voltage detector for VDDA threshold 3 Rising edge 2.74 2.83 2.91 Falling edge 2.64 2.72 2.80 Vhyst_VDDA Hysteresis of VDDA voltage detector -- 100 - mV IDD_PVM PVM consumption from VDD(1) -- - 0.25 µA IDD_VDDA Voltage detector consumption on VDDA(1) Resistor bridge - - 2.5 µA 1. Guaranteed by design. 2. BOR0 is enabled in all modes and its consumption is therefore included in the supply current characteristics tables (refer to Section 6.3.6: Supply current characteristics). Table 27. Reset and power control block characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 28. Embedded reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltages -40°C < TJ < 105°C, VDD = 3.3 V 1.180 1.216 1.255 V tS_vrefint(1)(2) ADC sampling time when reading the internal reference voltage -4.3 - - µs tS_vbat(1)(2) VBAT sampling time when reading the internal VBAT reference voltage -9 - - Irefbuf(2) Reference Buffer consumption for ADC VDDA=3.3 V 9 13.5 23 µA ΔV REFINT (2) Internal reference voltage spread over the temperature range -40°C < TJ < 105°C - 5 15 mV Tcoeff(2) Average temperature coefficient Average temperature coefficient -20 70 ppm/°C VDDcoeff(2) Average Voltage coefficient 3.0V < VDD < 3.6V - 10 1370 ppm/V |
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