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STM32U545NET3QTR датащи(PDF) 176 Page - STMicroelectronics

номер детали STM32U545NET3QTR
подробное описание детали  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, 512 KB flash memory, 274 KB SRAM, crypto
PDF  283 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32U545NET3QTR датащи(HTML) 176 Page - STMicroelectronics

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Table 71. Current consumption in VBAT mode
Symbol
Parameter
Conditions
Typ
Max(1)
Unit
-VBAT (V) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
IDD(VBAT)
Supply current in
VBAT mode (backup
registers retained),
RTC disabled
-
1.8
0.05
0.22
1.10
2.95
8.00
0.12
0.55
2.80
7.40
20.00
µA
2.4
0.06
0.24
1.15
3.05
8.20
0.15
0.60
2.90
7.70
21.00
3.0
0.08
0.29
1.30
3.30
8.65
0.20
0.73
3.30
8.30
22.00
3.3
0.15
0.40
1.50
3.60
9.15
0.37
1.00
3.80
9.00
23.00
3.6
0.31
0.66
1.90
4.25
10.00
0.77
1.70
4.80
11.00 25.00
IDD(VBATwith
RTC)
Supply current in
VBAT mode (backup
registers retained),
RTC enabled
RTC(2) clocked by LSE
bypassed at 32768 Hz
1.8
0.28
0.47
1.50
3.40
8.60
0.37
0.83
3.20
7.90
21.00
2.4
0.30
0.50
1.65
3.60
8.90
0.41
0.89
3.50
8.30
22.00
3.0
0.33
0.56
1.85
3.95
9.40
0.47
1.10
3.90
9.00
23.00
3.3
0.40
0.68
2.10
4.30
10.00
0.65
1.40
4.50
9.80
24.00
3.6
0.58
0.96
2.65
5.00
11.00
1.10
2.00
5.60
12.00 27.00
RTC(2) clocked by LSE
bypassed at 32768 Hz,
RT C_CALR.LPCAL = 1
1.8
0.28
0.47
1.40
3.35
8.50
0.62
1.10
3.60
8.40
22.00
2.4
0.30
0.50
1.50
3.45
8.75
0.67
1.20
3.90
8.70
22.00
3.0
0.32
0.56
1.70
3.75
9.25
0.74
1.40
4.30
9.50
24.00
3.3
0.40
0.68
1.95
4.10
9.80
0.93
1.70
5.00
11.00 25.00
3.6
0.58
0.96
2.40
4.80
11.00
1.40
2.40
6.20
13.00 28.00
RTC(2) clocked by LSE
quartz in low-drive
1.8
0.45
0.65
1.60
3.50
8.75
-
-
-
-
-
2.4
0.51
0.73
1.70
3.65
9.00
-
-
-
-
-
3.0
0.59
0.83
1.85
3.95
9.45
-
-
-
-
-
3.3
0.69
0.98
2.10
4.30
10.00
-
-
-
-
-
3.6
0.89
1.30
2.60
5.00
11.00
-
-
-
-
-



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