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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32H757II датащи(PDF) 220 Page - STMicroelectronics |
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STM32H757II датащи(HTML) 220 Page - STMicroelectronics |
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220 / 251 page  Electrical characteristics STM32H757xI 220/251 DS12931 Rev 1 SAI characteristics Unless otherwise specified, the parameters given in Table 122 for SAI are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 23: General operating conditions, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 10 • Capacitive load CL = 30 pF • IO Compensation cell activated. • Measurement points are done at CMOS levels: 0.5VDD • VOS level set to VOS1. Refer to Section 6.3.18: I/O port characteristics for more details on the input/output alternate function characteristics (SCK,SD,WS). Table 122. SAI characteristics(1) Symbol Parameter Conditions Min Max Unit fMCK SAI Main clock output - 256x8K 256xFS MHz fCK SAI clock frequency(2) Master Data: 32 bits - 128xFS(3) Slave Data: 32 bits - 128xFS(3) |
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