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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F103XC датащи(PDF) 108 Page - STMicroelectronics |
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STM32F103XC датащи(HTML) 108 Page - STMicroelectronics |
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108 / 143 page  Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE 108/143 DS5792 Rev 13 Figure 57. ADC accuracy characteristics 1. Example of an actual transfer curve. 2. Ideal transfer curve. 3. End point correlation line. 4. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO = Offset Error: deviation between the first actual transition and the first ideal one. EG = Gain Error: deviation between the last ideal transition and the last actual one. ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. Table 62. ADC accuracy(1) (2)(3) 1. ADC DC accuracy values are measured after internal calibration. 2. Better performance could be achieved in restricted VDD, frequency, VREF and temperature ranges. 3. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative current. Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 5.3.14 does not affect the ADC accuracy. Symbol Parameter Test conditions Typ Max(4) 4. Guaranteed by characterization results. Unit ET Total unadjusted error fPCLK2 = 56 MHz, fADC = 14 MHz, RAIN < 10 kΩ, VDDA = 2.4 V to 3.6 V Measurements made after ADC calibration ±2 ±5 LSB EO Offset error ±1.5 ±2.5 EG Gain error ±1.5 ±3 ED Differential linearity error ±1 ±2 EL Integral linearity error ±1.5 ±3 |
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