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STM32F405 датащи(PDF) 109 Page - STMicroelectronics |
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STM32F405 датащи(HTML) 109 Page - STMicroelectronics |
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109 / 204 page ![]() DS8626 Rev 9 109/203 STM32F405xx, STM32F407xx Electrical characteristics tERASE128KB Sector (128 KB) erase time Program/erase parallelism (PSIZE) = x 8 -2 4 s Program/erase parallelism (PSIZE) = x 16 -1.3 2.6 Program/erase parallelism (PSIZE) = x 32 -1 2 tME Mass erase time Program/erase parallelism (PSIZE) = x 8 -16 32 s Program/erase parallelism (PSIZE) = x 16 -11 22 Program/erase parallelism (PSIZE) = x 32 -8 16 Vprog Programming voltage 32-bit program operation 2.7 - 3.6 V 16-bit program operation 2.1 - 3.6 V 8-bit program operation 1.8 - 3.6 V 1. Guaranteed by characterization. 2. The maximum programming time is measured after 100K erase operations. Table 40. Flash memory programming (continued) Symbol Parameter Conditions Min(1) Typ Max(1) Unit |
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