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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F405 датащи(PDF) 103 Page - STMicroelectronics |
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STM32F405 датащи(HTML) 103 Page - STMicroelectronics |
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103 / 204 page  DS8626 Rev 9 103/203 STM32F405xx, STM32F407xx Electrical characteristics Figure 33. Typical application with a 32.768 kHz crystal 5.3.9 Internal clock source characteristics The parameters given in Table 34 and Table 35 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 14. High-speed internal (HSI) RC oscillator Low-speed internal (LSI) RC oscillator ai17531 OSC32_OU T OSC32_IN fLSE CL1 RF STM32F 32.768 kH z resonator Resonator with integrated capacitors Bias controlled gain CL2 Table 34. HSI oscillator characteristics (1) 1. VDD = 3.3 V, PLL OFF, TA = –40 to 125 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Guaranteed by characterization. –8 - 4.5 % TA = –10 to 85 °C(3) –4 - 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. –1 - 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA Table 35. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Guaranteed by characterization. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA |
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