STM32F730R8 datasheet(105/202 Pages) STMICROELECTRONICS

номер детали	STM32F730R8

подробное описание детали	Arm® Cortex®-M7 32b MCUFPU, 462DMIPS, 64KB Flash /256164KB RAM, USB OTG HS/FS, 18 TIMs, 3 ADCs, 21 com IF

PDF	202 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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105 / 202 page

DS12536 Rev 2

105/202

STM32F730x8

Electrical characteristics

185

Table 33. Typical and maximum current consumptions in VBAT mode

Symbol

Parameter

Conditions(1)

Typ

Max(2)

Unit

TA =25 °C

TA =85 °C TA =105 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT=

3.3 V

VBAT = 3.6 V

IDD_VBAT

Supply current

in VBAT mode

Backup SRAM OFF, RTC and

LSE OFF

0.035

0.037

0.043

µA

Backup SRAM ON, RTC and

LSE OFF

0.69

0.71

0.73

Backup SRAM OFF, RTC ON

and LSE in low drive mode

0.57

0.74

1.05

244

Backup SRAM OFF, RTC ON

and LSE in medium low drive

mode

0.59

0.76

1.08

101

251

Backup SRAM OFF, RTC ON

and LSE in medium high drive

mode

0.69

0.86

1.19

111

277

Backup SRAM OFF, RTC ON

and LSE in high drive mode

0.8

0.98

1.31

122

305

Backup SRAM ON, RTC ON and

LSE in low drive mode

1.22

1.41

1.74

162

405

Backup SRAM ON, RTC ON and

LSE in Medium low drive mode

1.25

1.43

1.78

166

414

Backup SRAM ON, RTC ON and

LSE in Medium high drive mode

1.46

1.65

2.01

187

468

Backup SRAM ON, RTC ON and

LSE in High drive mode

1.46

1.65

2.01

187

468

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization results.

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