NTMFD5C674NL

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

28

mV/°C

Zero Gate Voltage Drain Current

10

mA

100

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

1.2

2.2

V

Negative Threshold Temperature Coefficient

−4.6

mV/°C

Drain−to−Source On Resistance

11.7

14.4

mW

16.4

20.4

Forward Transconductance

27.5

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

640

pF

Output Capacitance

313

Reverse Transfer Capacitance

7.7

Total Gate Charge

4.7

nC

Total Gate Charge

10

Threshold Gate Charge

1.4

Gate−to−Source Charge

2.3

Gate−to−Drain Charge

1.0

Plateau Voltage

3.1

V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

9.4

ns

Rise Time

32.1

Turn−Off Delay Time

18.6

Fall Time

27.5

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.9

1.2

V

0.8

Reverse Recovery Time

23.8

ns

Charge Time

11.5

Discharge Time

12.3

Reverse Recovery Charge

11.2

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.